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14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,942
In-stock
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IXYS | MOSFET P-CH 100V 50A TO-268 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 300W (Tc) | P-Channel | 100V | 50A (Tc) | 55 mOhm @ 25A, 10V | 5V @ 250µA | 140nC @ 10V | 4350pF @ 25V | 10V | ±20V | |||
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VIEW |
1,494
In-stock
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Infineon Technologies | MOSFET N-CH TO263-7 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 250W (Tc) | N-Channel | 100V | 180A (Tc) | 3.3 mOhm @ 100A, 10V | 3.5V @ 180µA | 140nC @ 10V | 10120pF @ 25V | 10V | ±20V | |||
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VIEW |
2,564
In-stock
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Infineon Technologies | MOSFET N-CH TO263-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 250W (Tc) | N-Channel | 100V | 120A (Tc) | 3.5 mOhm @ 100A, 10V | 3.5V @ 180µA | 140nC @ 10V | 10120pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,418
In-stock
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Infineon Technologies | MOSFET N-CH 100V 73A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 190W (Tc) | N-Channel | 100V | 73A (Tc) | 14 mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,465
In-stock
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Infineon Technologies | MOSFET N-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO263-3-1 | 250W (Tc) | N-Channel | 100V | 120A (Tc) | 3.9 mOhm @ 100A, 10V | 3.5V @ 180µA | 140nC @ 10V | 10120pF @ 25V | 10V | ±20V | |||
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VIEW |
2,987
In-stock
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Infineon Technologies | MOSFET N-CH TO220-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 250W (Tc) | N-Channel | 100V | 120A (Tc) | 3.9 mOhm @ 100A, 10V | 3.5V @ 180µA | 140nC @ 10V | 10120pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,629
In-stock
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Infineon Technologies | MOSFET N-CH 100V 73A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 190W (Tc) | N-Channel | 100V | 73A (Tc) | 14 mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | 10V | ±20V | |||
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|
VIEW |
2,471
In-stock
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Infineon Technologies | MOSFET N-CH 100V 73A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | 100V | 73A (Tc) | 14 mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | 10V | ±20V | |||
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VIEW |
1,195
In-stock
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Infineon Technologies | MOSFET N-CH 100V 73A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | 100V | 73A (Tc) | 14 mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | 10V | ±20V | |||
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|
VIEW |
2,405
In-stock
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Infineon Technologies | MOSFET N-CH 100V 73A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | 100V | 73A (Tc) | 14 mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | 10V | ±20V | |||
|
VIEW |
3,227
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 100A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 255W (Tc) | N-Channel | 100V | 100A (Ta) | 3.4 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 8800pF @ 50V | 10V | ±20V | |||
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VIEW |
3,944
In-stock
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IXYS | MOSFET P-CH 100V 50A TO-247AD | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 300W (Tc) | P-Channel | 100V | 50A (Tc) | 55 mOhm @ 25A, 10V | 5V @ 250µA | 140nC @ 10V | 4350pF @ 25V | 10V | ±20V | |||
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VIEW |
2,035
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 100A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 100V | 100A (Tc) | 3.8 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 8800pF @ 50V | 10V | ±20V | |||
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VIEW |
2,214
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 41A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 230W (Tc) | N-Channel | 100V | 41A (Tc) | 55 mOhm @ 25A, 10V | 4V @ 250µA | 140nC @ 10V | 2800pF @ 25V | 10V | ±20V | |||
