- Series :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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11 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,055
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 157W (Tc) | N-Channel | - | 100V | 55A (Ta) | 6.5 mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | 10V | ±20V | |||
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VIEW |
661
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 157W (Tc) | N-Channel | - | 100V | 55A (Ta) | 6.5 mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | 10V | ±20V | |||
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VIEW |
2,568
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 157W (Tc) | N-Channel | - | 100V | 55A (Ta) | 6.5 mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | 10V | ±20V | |||
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VIEW |
2,278
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 57A D2PAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 148W (Tc) | N-Channel | - | 100V | 57A (Tj) | 16 mOhm @ 15A, 10V | 4V @ 1mA | 49nC @ 10V | 2404pF @ 50V | 10V | ±20V | |||
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VIEW |
2,004
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 57A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 148W (Tc) | N-Channel | - | 100V | 57A (Tj) | 16 mOhm @ 15A, 10V | 4V @ 1mA | 49nC @ 10V | 2404pF @ 50V | 10V | ±20V | |||
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VIEW |
2,622
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 57A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 148W (Tc) | N-Channel | - | 100V | 57A (Tj) | 16 mOhm @ 15A, 10V | 4V @ 1mA | 49nC @ 10V | 2404pF @ 50V | 10V | ±20V | |||
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VIEW |
3,030
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 148W (Tc) | N-Channel | - | 100V | 57A (Tj) | 16 mOhm @ 15A, 10V | 4V @ 1mA | 49nC @ 10V | 2404pF @ 50V | 10V | ±20V | |||
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VIEW |
3,814
In-stock
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IXYS | MOSFET N-CH 100V 60A TO-263 | TrenchMV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 176W (Tc) | N-Channel | - | 100V | 60A (Tc) | 18 mOhm @ 25A, 10V | 4.5V @ 50µA | 49nC @ 10V | 2650pF @ 25V | 10V | ±30V | |||
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VIEW |
667
In-stock
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IXYS | MOSFET N-CH 100V 60A TO-220 | TrenchMV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 176W (Tc) | N-Channel | - | 100V | 60A (Tc) | 18 mOhm @ 25A, 10V | 4.5V @ 50µA | 49nC @ 10V | 2650pF @ 25V | 10V | ±30V | |||
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VIEW |
3,756
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 40A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 100V | 40A (Tc) | 8.2 mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | 3000pF @ 50V | 10V | ±20V | |||
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VIEW |
1,761
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 90A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 126W (Tc) | N-Channel | - | 100V | 90A (Tc) | 8.2 mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | 3000pF @ 50V | 10V | ±20V |