Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK22A10N1,S4X
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RFQ
1,466
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 52A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 100V 22A (Tc) 13.8 mOhm @ 11A, 10V 4V @ 300µA 28nC @ 10V 1800pF @ 50V 10V ±20V
TK22E10N1,S1X
RFQ
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RFQ
2,633
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 100V 52A TO220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 72W (Tc) N-Channel - 100V 52A (Tc) 13.8 mOhm @ 11A, 10V 4V @ 300µA 28nC @ 10V 1800pF @ 50V 10V ±20V
TPH1400ANH,L1Q
RFQ
VIEW
RFQ
3,461
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 100V 24A 8-SOP U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 48W (Tc) N-Channel - 100V 24A (Tc) 13.6 mOhm @ 12A, 10V 4V @ 300µA 22nC @ 10V 1900pF @ 50V 10V ±20V
TPH1400ANH,L1Q
RFQ
VIEW
RFQ
1,465
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 100V 24A 8-SOP U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 48W (Tc) N-Channel - 100V 24A (Tc) 13.6 mOhm @ 12A, 10V 4V @ 300µA 22nC @ 10V 1900pF @ 50V 10V ±20V
TPH1400ANH,L1Q
RFQ
VIEW
RFQ
3,013
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 100V 24A 8-SOP U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 48W (Tc) N-Channel - 100V 24A (Tc) 13.6 mOhm @ 12A, 10V 4V @ 300µA 22nC @ 10V 1900pF @ 50V 10V ±20V