Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TK22A10N1,S4X
RFQ
VIEW
RFQ
1,466
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 52A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 100V 22A (Tc) 13.8 mOhm @ 11A, 10V 4V @ 300µA 28nC @ 10V 1800pF @ 50V 10V ±20V
FQB22P10TM
RFQ
VIEW
RFQ
797
In-stock
ON Semiconductor MOSFET P-CH 100V 22A D2PAK QFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.75W (Ta), 125W (Tc) P-Channel - 100V 22A (Tc) 125 mOhm @ 11A, 10V 4V @ 250µA 50nC @ 10V 1500pF @ 25V 10V ±30V
FQB22P10TM
RFQ
VIEW
RFQ
3,031
In-stock
ON Semiconductor MOSFET P-CH 100V 22A D2PAK QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.75W (Ta), 125W (Tc) P-Channel - 100V 22A (Tc) 125 mOhm @ 11A, 10V 4V @ 250µA 50nC @ 10V 1500pF @ 25V 10V ±30V
FQB22P10TM
RFQ
VIEW
RFQ
2,982
In-stock
ON Semiconductor MOSFET P-CH 100V 22A D2PAK QFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.75W (Ta), 125W (Tc) P-Channel - 100V 22A (Tc) 125 mOhm @ 11A, 10V 4V @ 250µA 50nC @ 10V 1500pF @ 25V 10V ±30V