Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,115
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Microsemi Corporation MOSFET N-CH 100V 38A TO-204AE - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AE TO-3 4W (Ta), 150W (Tc) N-Channel - 100V 38A (Tc) 65 mOhm @ 38A, 10V 4V @ 250µA 125nC @ 10V - 10V ±20V
AUIRF5210STRL
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966
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Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
AUIRF5210STRL
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1,533
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Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
AUIRF5210STRL
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RFQ
2,879
In-stock
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
STP80NF10FP
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3,080
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STMicroelectronics MOSFET N-CH 100V 38A TO-220FP STripFET™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 45W (Tc) N-Channel - 100V 38A (Tc) 15 mOhm @ 40A, 10V 4V @ 250µA 189nC @ 10V 4300pF @ 25V 10V ±20V
IRF5210STRLPBF
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2,450
In-stock
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210STRLPBF
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RFQ
3,573
In-stock
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210STRLPBF
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RFQ
1,539
In-stock
Infineon Technologies MOSFET P-CH 100V 38A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V
IRF5210LPBF
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RFQ
2,492
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Infineon Technologies MOSFET P-CH 100V 38A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.1W (Ta), 170W (Tc) P-Channel - 100V 38A (Tc) 60 mOhm @ 38A, 10V 4V @ 250µA 230nC @ 10V 2780pF @ 25V 10V ±20V