Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PSMN020-100YS,115
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3,820
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Nexperia USA Inc. MOSFET N-CH 100V 43A LFPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 106W (Tc) N-Channel - 100V 43A (Tc) 20.5 mOhm @ 15A, 10V 4V @ 1mA 41nC @ 10V 2210pF @ 50V 10V ±20V
PSMN020-100YS,115
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3,322
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Nexperia USA Inc. MOSFET N-CH 100V 43A LFPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 106W (Tc) N-Channel - 100V 43A (Tc) 20.5 mOhm @ 15A, 10V 4V @ 1mA 41nC @ 10V 2210pF @ 50V 10V ±20V
PSMN020-100YS,115
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RFQ
3,346
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Nexperia USA Inc. MOSFET N-CH 100V 43A LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 106W (Tc) N-Channel - 100V 43A (Tc) 20.5 mOhm @ 15A, 10V 4V @ 1mA 41nC @ 10V 2210pF @ 50V 10V ±20V
IRFI4410ZPBF
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1,448
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Infineon Technologies MOSFET N-CH 100V 43A TO-220FP HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 47W (Tc) N-Channel - 100V 43A (Tc) 9.3 mOhm @ 26A, 10V 4V @ 150µA 110nC @ 10V 4910pF @ 50V 10V ±30V