Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTN210P10T
RFQ
VIEW
RFQ
3,503
In-stock
IXYS MOSFET P-CH 100V 210A SOT-227 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 830W (Tc) P-Channel - 100V 210A (Tc) 7.5 mOhm @ 105A, 10V 4.5V @ 250µA 740nC @ 10V 69500pF @ 25V 10V ±15V
IXFX200N10P
RFQ
VIEW
RFQ
775
In-stock
IXYS MOSFET N-CH 100V 200A PLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 830W (Tc) N-Channel - 100V 200A (Tc) 7.5 mOhm @ 100A, 10V 5V @ 8mA 235nC @ 10V 7600pF @ 25V 10V ±20V
IXFK200N10P
RFQ
VIEW
RFQ
1,030
In-stock
IXYS MOSFET N-CH 100V 200A TO-264 HiPerFET™, PolarP2™ Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 830W (Tc) N-Channel - 100V 200A (Tc) 7.5 mOhm @ 100A, 10V 5V @ 8mA 235nC @ 10V 7600pF @ 25V 10V ±20V
IXTN200N10L2
RFQ
VIEW
RFQ
2,070
In-stock
IXYS MOSFET N-CH 100V 178A SOT-227 Linear L2™ Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 830W (Tc) N-Channel - 100V 178A (Tc) 11 mOhm @ 100A, 10V 4.5V @ 3mA 540nC @ 10V 23000pF @ 25V 10V ±20V
IXFN360N10T
RFQ
VIEW
RFQ
3,766
In-stock
IXYS MOSFET N-CH 100V 360A SOT-227B HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 830W (Tc) N-Channel - 100V 360A (Tc) 2.6 mOhm @ 180A, 10V 4.5V @ 250µA 505nC @ 10V 36000pF @ 25V 10V ±20V