Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TK100E10N1,S1X
RFQ
VIEW
RFQ
3,227
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 100A TO220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220 255W (Tc) N-Channel - 100V 100A (Ta) 3.4 mOhm @ 50A, 10V 4V @ 1mA 140nC @ 10V 8800pF @ 50V 10V ±20V
FDP3651U
RFQ
VIEW
RFQ
1,933
In-stock
ON Semiconductor MOSFET N-CH 100V 80A TO-220AB PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 255W (Tc) N-Channel - 100V 80A (Tc) 18 mOhm @ 80A, 10V 5.5V @ 250µA 69nC @ 10V 5522pF @ 25V 10V ±20V