Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTF200N10T
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1,403
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IXYS MOSFET N-CH 100V 90A I4-PAC-5 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole i4-Pac™-5 ISOPLUS i4-PAC™ 156W (Tc) N-Channel - 100V 90A (Tc) 7 mOhm @ 50A, 10V 4.5V @ 250µA 152nC @ 10V 9400pF @ 25V 10V ±30V
BSC100N10NSFGATMA1
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3,495
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Infineon Technologies MOSFET N-CH 100V 90A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 156W (Tc) N-Channel - 100V 11.4A (Ta), 90A (Tc) 10 mOhm @ 25A, 10V 4V @ 110µA 44nC @ 10V 2900pF @ 50V 10V ±20V
BSC100N10NSFGATMA1
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VIEW
RFQ
2,728
In-stock
Infineon Technologies MOSFET N-CH 100V 90A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 156W (Tc) N-Channel - 100V 11.4A (Ta), 90A (Tc) 10 mOhm @ 25A, 10V 4V @ 110µA 44nC @ 10V 2900pF @ 50V 10V ±20V
BSC100N10NSFGATMA1
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VIEW
RFQ
773
In-stock
Infineon Technologies MOSFET N-CH 100V 90A TDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 156W (Tc) N-Channel - 100V 11.4A (Ta), 90A (Tc) 10 mOhm @ 25A, 10V 4V @ 110µA 44nC @ 10V 2900pF @ 50V 10V ±20V
TK65G10N1,RQ
RFQ
VIEW
RFQ
2,964
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 65A D2PAK U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 156W (Tc) N-Channel - 100V 65A (Ta) 4.5 mOhm @ 32.5A, 10V 4V @ 1mA 81nC @ 10V 5400pF @ 50V 10V ±20V
TK65G10N1,RQ
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RFQ
2,518
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 65A D2PAK U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 156W (Tc) N-Channel - 100V 65A (Ta) 4.5 mOhm @ 32.5A, 10V 4V @ 1mA 81nC @ 10V 5400pF @ 50V 10V ±20V
TK65G10N1,RQ
RFQ
VIEW
RFQ
3,454
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 65A D2PAK U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 156W (Tc) N-Channel - 100V 65A (Ta) 4.5 mOhm @ 32.5A, 10V 4V @ 1mA 81nC @ 10V 5400pF @ 50V 10V ±20V