- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,945
In-stock
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Infineon Technologies | MOSFET N CH 100V 56A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | |||
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VIEW |
3,427
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 56.6A TO220 | ThunderFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 Full Pack | 39W (Tc) | N-Channel | - | 100V | 56.6A (Tc) | 6.1 mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | 3300pF @ 50V | 7.5V, 10V | ±20V | |||
|
VIEW |
1,684
In-stock
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Infineon Technologies | MOSFET N CH 100V 35A TO220 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 42W (Tc) | N-Channel | - | 100V | 35A (Tc) | 13.5 mOhm @ 21A, 10V | 4V @ 100µA | 81nC @ 10V | 2998pF @ 50V | 10V | ±20V | |||
|
VIEW |
2,027
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 148A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 192W (Tc) | N-Channel | - | 100V | 148A (Ta) | 4.8 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V | |||
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VIEW |
3,454
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 65A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 100V | 65A (Tc) | 4.8 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V | |||
