Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFR4510PBF
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Infineon Technologies MOSFET N CH 100V 56A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 143W (Tc) N-Channel - 100V 56A (Tc) 13.9 mOhm @ 38A, 10V 4V @ 100µA 81nC @ 10V 3031pF @ 50V 10V ±20V
SUM70060E-GE3
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1,695
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Vishay Siliconix MOSFET N-CH 100V 131A D2PK TO263 ThunderFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D2Pak) 375W (Tc) N-Channel - 100V 131A (Tc) 5.6 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3330pF @ 50V 7.5V, 10V ±20V
SUM70060E-GE3
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1,327
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Vishay Siliconix MOSFET N-CH 100V 131A TO263 ThunderFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D2Pak) 375W (Tc) N-Channel - 100V 131A (Tc) 5.6 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3330pF @ 50V 7.5V, 10V ±20V
TK65G10N1,RQ
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2,964
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 65A D2PAK U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 156W (Tc) N-Channel - 100V 65A (Ta) 4.5 mOhm @ 32.5A, 10V 4V @ 1mA 81nC @ 10V 5400pF @ 50V 10V ±20V
TK65G10N1,RQ
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2,518
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 65A D2PAK U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 156W (Tc) N-Channel - 100V 65A (Ta) 4.5 mOhm @ 32.5A, 10V 4V @ 1mA 81nC @ 10V 5400pF @ 50V 10V ±20V
TK65G10N1,RQ
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3,454
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 65A D2PAK U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 156W (Tc) N-Channel - 100V 65A (Ta) 4.5 mOhm @ 32.5A, 10V 4V @ 1mA 81nC @ 10V 5400pF @ 50V 10V ±20V
IRFR4510TRPBF
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1,069
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Infineon Technologies MOSFET N CH 100V 56A DPAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 143W (Tc) N-Channel - 100V 56A (Tc) 13.9 mOhm @ 38A, 10V 4V @ 100µA 81nC @ 10V 3031pF @ 50V 10V ±20V
IRFR4510TRPBF
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2,108
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Infineon Technologies MOSFET N CH 100V 56A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 143W (Tc) N-Channel - 100V 56A (Tc) 13.9 mOhm @ 38A, 10V 4V @ 100µA 81nC @ 10V 3031pF @ 50V 10V ±20V
IRFR4510TRPBF
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RFQ
1,265
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Infineon Technologies MOSFET N CH 100V 56A DPAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 143W (Tc) N-Channel - 100V 56A (Tc) 13.9 mOhm @ 38A, 10V 4V @ 100µA 81nC @ 10V 3031pF @ 50V 10V ±20V