Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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VN2210N2
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3,345
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Microchip Technology MOSFET N-CH 100V 1.7A TO39-3 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-205AD, TO-39-3 Metal Can TO-39 360mW (Tc) N-Channel 100V 1.7A (Tj) 350 mOhm @ 4A, 10V 2.4V @ 10mA 500pF @ 25V 5V, 10V ±20V
VN2210N3-G
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1,998
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Microchip Technology MOSFET N-CH 100V 1.2A TO92-3 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92-3 740mW (Tc) N-Channel 100V 1.2A (Tj) 350 mOhm @ 4A, 10V 2.4V @ 10mA 500pF @ 25V 5V, 10V ±20V