- Series :
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- Supplier Device Package :
- Power Dissipation (Max) :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,485
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 14A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | - | N-Channel | - | 100V | 14A (Tc) | 160 mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,649
In-stock
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STMicroelectronics | MOSFET N-CH 100V 14A TO-220 | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 60W (Tc) | N-Channel | - | 100V | 14A (Tc) | 160 mOhm @ 7A, 10V | 4V @ 250µA | 21nC @ 10V | 458pF @ 25V | 10V | ±20V | |||
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VIEW |
3,755
In-stock
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Infineon Technologies | MOSFET P-CH 100V 14A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,230
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 14A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 88W (Tc) | N-Channel | - | 100V | 14A (Tc) | 160 mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,740
In-stock
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ON Semiconductor | MOSFET N-CH 100V 14A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 55W (Tc) | N-Channel | - | 100V | 14A (Tc) | 110 mOhm @ 7A, 10V | 4V @ 250µA | 36nC @ 10V | 790pF @ 25V | 10V | - | |||
|
VIEW |
1,182
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 14A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 88W (Tc) | N-Channel | Current Sensing | 100V | 14A (Tc) | 160 mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
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VIEW |
1,582
In-stock
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Infineon Technologies | MOSFET N-CH 100V 14A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 56W (Tc) | N-Channel | - | 100V | 14A (Tc) | 115 mOhm @ 8.4A, 10V | 4V @ 250µA | 32nC @ 10V | 740pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,182
In-stock
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Infineon Technologies | MOSFET P-CH 100V 14A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,753
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 14A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 88W (Tc) | N-Channel | - | 100V | 14A (Tc) | 160 mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,406
In-stock
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Infineon Technologies | MOSFET P-CH 100V 14A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,855
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 14A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 88W (Tc) | N-Channel | - | 100V | 14A (Tc) | 160 mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,887
In-stock
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Infineon Technologies | MOSFET P-CH 100V 14A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
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|
VIEW |
821
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 14A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 3.7W (Ta), 88W (Tc) | N-Channel | - | 100V | 14A (Tc) | 160 mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | 10V | ±20V | |||
