- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
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- Rds On (Max) @ Id, Vgs :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,477
In-stock
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Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 375W (Tc) | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | |||
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VIEW |
991
In-stock
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STMicroelectronics | MOSFET N-CH 100V 180A ISOTOP | STripFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP | ISOTOP® | 360W (Tc) | N-Channel | - | 100V | 180A (Tc) | 6 Ohm @ 40A, 10V | 4V @ 250µA | 795nC @ 10V | 21000pF @ 25V | 10V | ±20V | |||
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VIEW |
737
In-stock
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IXYS | MOSFET N-CH 100V 180A TO-263AA | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXFA) | 480W (Tc) | N-Channel | - | 100V | 180A (Tc) | 6 mOhm @ 50A, 10V | 4V @ 250µA | 185nC @ 10V | 10500pF @ 25V | 10V | ±20V | |||
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VIEW |
2,727
In-stock
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IXYS | MOSFET N-CH 100V 180A TO-220 | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 480W (Tc) | N-Channel | - | 100V | 180A (Tc) | 6 mOhm @ 50A, 10V | 4V @ 250µA | 185nC @ 10V | 10500pF @ 25V | 10V | ±20V | |||
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VIEW |
700
In-stock
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Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 375W (Tc) | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | |||
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VIEW |
2,764
In-stock
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Vishay Semiconductor Diodes Division | MOSFET N-CH 100V 180A SOT-227 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 480W (Tc) | N-Channel | - | 100V | 180A (Tc) | 6.5 mOhm @ 108A, 10V | 4V @ 250µA | 380nC @ 10V | 10700pF @ 25V | 10V | ±20V | |||
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VIEW |
2,655
In-stock
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Infineon Technologies | MOSFET N-CH 100V 180A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 375W (Tc) | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V |