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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF9510	RFQ VIEW	PDF RFQ	838 In-stock	Vishay Siliconix	MOSFET P-CH 100V 4A TO-220AB		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	43W (Tc)	P-Channel	100V	4A (Tc)	1.2 Ohm @ 2.4A, 10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	10V	±20V
	IRF510	RFQ VIEW	PDF RFQ	3,264 In-stock	Vishay Siliconix	MOSFET N-CH 100V 5.6A TO-220AB		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	43W (Tc)	N-Channel	100V	5.6A (Tc)	540 mOhm @ 3.4A, 10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	10V	±20V
	FDPF045N10A	RFQ VIEW	PDF RFQ	3,754 In-stock	ON Semiconductor	MOSFET N-CH 100V 67A TO-220-3		PowerTrench®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-3	43W (Tc)	N-Channel	100V	67A (Tc)	4.5 mOhm @ 67A, 10V	4V @ 250µA	74nC @ 10V	5270pF @ 50V	10V	±20V
	IRF510PBF	RFQ VIEW	PDF RFQ	3,591 In-stock	Vishay Siliconix	MOSFET N-CH 100V 5.6A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	43W (Tc)	N-Channel	100V	5.6A (Tc)	540 mOhm @ 3.4A, 10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	10V	±20V
	IRF9510PBF	RFQ VIEW	PDF RFQ	1,728 In-stock	Vishay Siliconix	MOSFET P-CH 100V 4A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	43W (Tc)	P-Channel	100V	4A (Tc)	1.2 Ohm @ 2.4A, 10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	10V	±20V

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