Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFG40N10
RFQ
VIEW
RFQ
2,999
In-stock
ON Semiconductor MOSFET N-CH 100V 40A TO-247 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 160W (Tc) N-Channel - 100V 40A (Tc) 40 mOhm @ 40A, 10V 4V @ 250µA 300nC @ 20V - 10V ±20V
AUIRF3710Z
RFQ
VIEW
RFQ
647
In-stock
Infineon Technologies MOSFET N-CH 100V 59A TO220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 100V 59A (Tc) 18 mOhm @ 35A, 10V 4V @ 250µA 120nC @ 10V 2900pF @ 25V 10V ±20V
IRF3710ZLPBF
RFQ
VIEW
RFQ
1,839
In-stock
Infineon Technologies MOSFET N-CH 100V 59A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 160W (Tc) N-Channel - 100V 59A (Tc) 18 mOhm @ 35A, 10V 4V @ 250µA 120nC @ 10V 2900pF @ 25V 10V ±20V
IRF3710ZSPBF
RFQ
VIEW
RFQ
3,406
In-stock
Infineon Technologies MOSFET N-CH 100V 59A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 160W (Tc) N-Channel - 100V 59A (Tc) 18 mOhm @ 35A, 10V 4V @ 250µA 120nC @ 10V 2900pF @ 25V 10V ±20V
RFP40N10
RFQ
VIEW
RFQ
2,674
In-stock
ON Semiconductor MOSFET N-CH 100V 40A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 100V 40A (Tc) 40 mOhm @ 40A, 10V 4V @ 250µA 300nC @ 20V - 10V ±20V
IRFP150NPBF
RFQ
VIEW
RFQ
2,839
In-stock
Infineon Technologies MOSFET N-CH 100V 42A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 160W (Tc) N-Channel - 100V 42A (Tc) 36 mOhm @ 23A, 10V 4V @ 250µA 110nC @ 10V 1900pF @ 25V 10V ±20V
IRF3710ZPBF
RFQ
VIEW
RFQ
3,946
In-stock
Infineon Technologies MOSFET N-CH 100V 59A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 100V 59A (Tc) 18 mOhm @ 35A, 10V 4V @ 250µA 120nC @ 10V 2900pF @ 25V 10V ±20V
IRF1310NPBF
RFQ
VIEW
RFQ
3,596
In-stock
Infineon Technologies MOSFET N-CH 100V 42A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 100V 42A (Tc) 36 mOhm @ 22A, 10V 4V @ 250µA 110nC @ 10V 1900pF @ 25V 10V ±20V
FQP70N10
RFQ
VIEW
RFQ
793
In-stock
ON Semiconductor MOSFET N-CH 100V 57A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 160W (Tc) N-Channel - 100V 57A (Tc) 23 mOhm @ 28.5A, 10V 4V @ 250µA 110nC @ 10V 3300pF @ 25V 10V ±25V
IRFP150MPBF
RFQ
VIEW
RFQ
2,126
In-stock
Infineon Technologies MOSFET N-CH 100V 42A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 160W (Tc) N-Channel - 100V 42A (Tc) 36 mOhm @ 23A, 10V 4V @ 250µA 110nC @ 10V 1900pF @ 25V 10V ±20V
AUIRF3710ZS
RFQ
VIEW
RFQ
3,975
In-stock
Infineon Technologies MOSFET N-CH 100V 59A D2PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 160W (Tc) N-Channel - 100V 59A (Tc) 18 mOhm @ 35A, 10V 4V @ 250µA 120nC @ 10V 2900pF @ 25V 10V ±20V