- Manufacture :
- Part Status :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,765
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 1.1A SOT223 | - | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | P-Channel | - | 100V | 1.1A (Tc) | 1.2 Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
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VIEW |
2,209
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 1.5A SOT223 | - | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | - | 100V | 1.5A (Tc) | 540 mOhm @ 900mA, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | |||
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VIEW |
3,772
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 1.1A SOT223 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | P-Channel | - | 100V | 1.1A (Tc) | 1.2 Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,148
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 1.5A SOT223 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | - | 100V | 1.5A (Tc) | 540 mOhm @ 900mA, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | |||
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VIEW |
3,712
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
