Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
HUF75617D3S
RFQ
VIEW
RFQ
3,286
In-stock
ON Semiconductor MOSFET N-CH 100V 16A DPAK UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 64W (Tc) N-Channel 100V 16A (Tc) 90 mOhm @ 16A, 10V 4V @ 250µA 39nC @ 20V 570pF @ 25V 10V ±20V
HUFA75617D3S
RFQ
VIEW
RFQ
949
In-stock
ON Semiconductor MOSFET N-CH 100V 16A DPAK UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 64W (Tc) N-Channel 100V 16A (Tc) 90 mOhm @ 16A, 10V 4V @ 250µA 39nC @ 20V 570pF @ 25V 10V ±20V
IRFR120_R4941
RFQ
VIEW
RFQ
1,944
In-stock
ON Semiconductor MOSFET N-CH 100V 8.4A TO-252AA - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 50W (Tc) N-Channel 100V 8.4A (Tc) 270 mOhm @ 5.9A, 10V 4V @ 250µA 15nC @ 10V 350pF @ 25V 10V ±20V