Transistors - FETs, MOSFETs - Single Products For Sale - PDF - Discrete Semiconductor Products -

Applied Filters :

7 results

Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
GLOBAL STOCKS
	IRFP150NPBF	RFQ VIEW	PDF RFQ	2,839 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A TO-247AC		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 23A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V
	IRF1310NSTRLPBF	RFQ VIEW	PDF RFQ	1,102 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A D2PAK		HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 22A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V
	IRF1310NSTRLPBF	RFQ VIEW	PDF RFQ	3,078 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A D2PAK		HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 22A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V
	IRF1310NSTRLPBF	RFQ VIEW	PDF RFQ	3,430 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A D2PAK		HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3.8W (Ta), 160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 22A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V
	IRF1310NPBF	RFQ VIEW	PDF RFQ	3,596 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 22A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V
	IRFI1310NPBF	RFQ VIEW	PDF RFQ	3,713 In-stock	Infineon Technologies	MOSFET N-CH 100V 24A TO220FP		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak	56W (Tc)	N-Channel	-	100V	24A (Tc)	36 mOhm @ 13A, 10V	4V @ 250µA	120nC @ 10V	1900pF @ 25V	10V	±20V
	IRFP150MPBF	RFQ VIEW	PDF RFQ	2,126 In-stock	Infineon Technologies	MOSFET N-CH 100V 42A TO-247AC		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC	160W (Tc)	N-Channel	-	100V	42A (Tc)	36 mOhm @ 23A, 10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	10V	±20V

1 / 1

＜Prev Next＞