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- Supplier Device Package :
- Power Dissipation (Max) :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,815
In-stock
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ON Semiconductor | MOSFET N-CH 100V 40A TO-220F | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 33.3W (Tc) | N-Channel | - | 100V | 40A (Tc) | 8.5 mOhm @ 40A, 10V | 4V @ 250µA | 40nC @ 10V | 2695pF @ 50V | 10V | ±20V | |||
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VIEW |
2,313
In-stock
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STMicroelectronics | MOSFET N-CH 100V 40A D2PAK | STripFET™ II | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 115W (Tc) | N-Channel | - | 100V | 40A (Tc) | 35 mOhm @ 17.5A, 10V | 4V @ 250µA | 55nC @ 10V | 1550pF @ 25V | 10V | ±20V | |||
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VIEW |
1,657
In-stock
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STMicroelectronics | MOSFET N-CH 100V 40A D2PAK | STripFET™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 115W (Tc) | N-Channel | - | 100V | 40A (Tc) | 35 mOhm @ 17.5A, 10V | 4V @ 250µA | 55nC @ 10V | 1550pF @ 25V | 10V | ±20V | |||
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VIEW |
2,672
In-stock
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STMicroelectronics | MOSFET N-CH 100V 40A D2PAK | STripFET™ II | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 115W (Tc) | N-Channel | - | 100V | 40A (Tc) | 35 mOhm @ 17.5A, 10V | 4V @ 250µA | 55nC @ 10V | 1550pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,328
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 40A POWERDI506 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.6W (Ta) | N-Channel | - | 100V | 40A (Tc) | 28 mOhm @ 20A, 10V | 4V @ 250µA | 36nC @ 10V | 2245pF @ 50V | 10V | ±20V | |||
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VIEW |
3,263
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 40A POWERDI506 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.6W (Ta) | N-Channel | - | 100V | 40A (Tc) | 28 mOhm @ 20A, 10V | 4V @ 250µA | 36nC @ 10V | 2245pF @ 50V | 10V | ±20V | |||
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VIEW |
2,185
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 40A POWERDI506 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.6W (Ta) | N-Channel | - | 100V | 40A (Tc) | 28 mOhm @ 20A, 10V | 4V @ 250µA | 36nC @ 10V | 2245pF @ 50V | 10V | ±20V | |||
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|
VIEW |
1,413
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 40A POWERDI | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.6W (Ta) | N-Channel | - | 100V | 40A (Tc) | 28 mOhm @ 20A, 10V | 4V @ 250µA | 36nC @ 10V | 2245pF @ 50V | 10V | ±20V | |||
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|
VIEW |
2,438
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 40A POWERDI | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.6W (Ta) | N-Channel | - | 100V | 40A (Tc) | 28 mOhm @ 20A, 10V | 4V @ 250µA | 36nC @ 10V | 2245pF @ 50V | 10V | ±20V | |||
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VIEW |
3,540
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 40A POWERDI | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.6W (Ta) | N-Channel | - | 100V | 40A (Tc) | 28 mOhm @ 20A, 10V | 4V @ 250µA | 36nC @ 10V | 2245pF @ 50V | 10V | ±20V | |||
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VIEW |
1,806
In-stock
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Infineon Technologies | MOSFET P-CH 100V 40A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | P-Channel | - | 100V | 40A (Tc) | 60 mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | 2700pF @ 25V | 10V | ±20V | |||
