Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTT60N10
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2,112
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IXYS MOSFET N-CH 100V 60A TO-268 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 300W (Tc) N-Channel - 100V 60A (Tc) 20 mOhm @ 30A, 10V 4V @ 250µA 110nC @ 10V 3200pF @ 25V 10V ±20V
IXFT320N10T2
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1,297
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IXYS MOSFET N-CH 100V 320A TO-26 GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 1000W (Tc) N-Channel - 100V 320A (Tc) 3.5 mOhm @ 100A, 10V 4V @ 250µA 430nC @ 10V 26000pF @ 25V 10V ±20V
IXTT140P10T
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2,472
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IXYS MOSFET P-CH 100V 140A TO-268 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 568W (Tc) P-Channel - 100V 140A (Tc) 12 mOhm @ 70A, 10V 4V @ 250µA 400nC @ 10V 31400pF @ 25V 10V ±15V
IXTT90P10P
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RFQ
1,592
In-stock
IXYS MOSFET P-CH 100V 90A TO-268 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 462W (Tc) P-Channel - 100V 90A (Tc) 25 mOhm @ 45A, 10V 4V @ 250µA 120nC @ 10V 5800pF @ 25V 10V ±20V