Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM160N10LCR RLG
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Taiwan Semiconductor Corporation MOSFET N-CH 100V 46A 8PDFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 83W (Tc) N-Channel 100V 46A (Tc) 16 mOhm @ 8A, 10V 2.5V @ 250µA 73nC @ 10V 4431pF @ 50V 4.5V, 10V ±20V
TSM160N10LCR RLG
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1,751
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Taiwan Semiconductor Corporation MOSFET N-CH 100V 46A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 83W (Tc) N-Channel 100V 46A (Tc) 16 mOhm @ 8A, 10V 2.5V @ 250µA 73nC @ 10V 4431pF @ 50V 4.5V, 10V ±20V
TSM160N10LCR RLG
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RFQ
1,818
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Taiwan Semiconductor Corporation MOSFET N-CH 100V 46A 8PDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 83W (Tc) N-Channel 100V 46A (Tc) 16 mOhm @ 8A, 10V 2.5V @ 250µA 73nC @ 10V 4431pF @ 50V 4.5V, 10V ±20V