- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,993
In-stock
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NXP USA Inc. | MOSFET N-CH 100V 100A SOT429 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 9 mOhm @ 25A, 10V | 4V @ 1mA | 214nC @ 10V | 9000pF @ 25V | 10V | ±20V | |||
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VIEW |
3,076
In-stock
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NXP USA Inc. | MOSFET N-CH 100V 80A SOT429 | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 263W (Tc) | N-Channel | - | 100V | 80A (Tc) | 15 mOhm @ 25A, 10V | 4V @ 1mA | 109nC @ 10V | 4720pF @ 25V | 10V | ±20V | |||
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VIEW |
693
In-stock
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IXYS | MOSFET P-CH 100V 170A PLUS247 | PolarP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 890W (Tc) | P-Channel | - | 100V | 170A (Tc) | 12 mOhm @ 500mA, 10V | 4V @ 1mA | 240nC @ 10V | 12600pF @ 25V | 10V | ±20V |