Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PSMN009-100W,127
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3,993
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NXP USA Inc. MOSFET N-CH 100V 100A SOT429 TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 300W (Tc) N-Channel - 100V 100A (Tc) 9 mOhm @ 25A, 10V 4V @ 1mA 214nC @ 10V 9000pF @ 25V 10V ±20V
PHW80NQ10T,127
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3,076
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NXP USA Inc. MOSFET N-CH 100V 80A SOT429 TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 263W (Tc) N-Channel - 100V 80A (Tc) 15 mOhm @ 25A, 10V 4V @ 1mA 109nC @ 10V 4720pF @ 25V 10V ±20V
IXTX170P10P
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RFQ
693
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IXYS MOSFET P-CH 100V 170A PLUS247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 890W (Tc) P-Channel - 100V 170A (Tc) 12 mOhm @ 500mA, 10V 4V @ 1mA 240nC @ 10V 12600pF @ 25V 10V ±20V