- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,184
In-stock
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IXYS | MOSFET N-CH 100V 110A TO-247 | PolarHT™ HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | 480W (Tc) | N-Channel | - | 100V | 110A (Tc) | 15 mOhm @ 500mA, 10V | 5V @ 4mA | 110nC @ 10V | 3550pF @ 25V | 10V | ±20V | |||
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VIEW |
3,416
In-stock
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IXYS | MOSFET N-CH 100V 110A TO-247 | Linear L2™ | Active | Bulk | MOSFET (Metal Oxide) | - | Through Hole | TO-247 (IXTH) | 600W (Tc) | N-Channel | - | 100V | 110A (Tc) | 18 mOhm @ 500mA, 10V | 4.5V @ 250µA | 260nC @ 10V | 10500pF @ 25V | 10V | ±20V | |||
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VIEW |
1,430
In-stock
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IXYS | MOSFET P-CH 100V 90A ISOPLUS247 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | 270W (Tc) | P-Channel | - | 100V | 110A (Tc) | 13 mOhm @ 70A, 10V | 4V @ 250µA | 400nC @ 10V | 31400pF @ 25V | 10V | ±15V | |||
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VIEW |
3,480
In-stock
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STMicroelectronics | MOSFET N-CH 100V 110A TO-247 | STripFET™ II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 312W (Tc) | N-Channel | - | 100V | 110A (Tc) | 10.5 mOhm @ 60A, 10V | 4V @ 250µA | 233nC @ 10V | 5200pF @ 25V | 10V | ±20V | |||
