Packaging :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
AUIRFP4110
RFQ
VIEW
RFQ
1,483
In-stock
Infineon Technologies MOSFET N-CH 100V 120A TO247 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 370W (Tc) N-Channel - 100V 120A (Tc) 4.5 mOhm @ 75A, 10V 4V @ 250µA 210nC @ 10V 9620pF @ 50V 10V ±20V
IRFP4110PBF
RFQ
VIEW
RFQ
2,449
In-stock
Infineon Technologies MOSFET N-CH 100V 120A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 370W (Tc) N-Channel - 100V 120A (Tc) 4.5 mOhm @ 75A, 10V 4V @ 250µA 210nC @ 10V 9620pF @ 50V 10V ±20V