Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,152
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EPC MOSFET N-CH 100V 1.7A DIE - Obsolete Digi-Reel® GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die - N-Channel 100V 1.7A (Ta) - 2.5V @ 600µA - 90pF @ 50V 5V +6V, -4V
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946
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EPC MOSFET N-CH 100V 1.7A DIE - Obsolete Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die - N-Channel 100V 1.7A (Ta) - 2.5V @ 600µA - 90pF @ 50V 5V +6V, -4V
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RFQ
1,803
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EPC MOSFET N-CH 100V 1.7A DIE - Obsolete Tape & Reel (TR) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die - N-Channel 100V 1.7A (Ta) 73 mOhm @ 1A, 5V 2.5V @ 600µA 120nC @ 50V 90pF @ 50V 5V +6V, -4V
BSP373 E6327
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3,089
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Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.7A (Ta) 300 mOhm @ 1.7A, 10V 4V @ 1mA - 550pF @ 25V 10V ±20V
BSP372 E6327
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RFQ
666
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Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.7A (Ta) 310 mOhm @ 1.7A, 5V 2V @ 1mA - 520pF @ 25V 5V ±14V
BSP373L6327HTSA1
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RFQ
3,077
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.7A (Ta) 300 mOhm @ 1.7A, 10V 4V @ 1mA - 550pF @ 25V 10V ±20V
BSP373L6327HTSA1
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RFQ
2,046
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.7A (Ta) 300 mOhm @ 1.7A, 10V 4V @ 1mA - 550pF @ 25V 10V ±20V
BSP373L6327HTSA1
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RFQ
1,489
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.7A (Ta) 300 mOhm @ 1.7A, 10V 4V @ 1mA - 550pF @ 25V 10V ±20V
BSP372L6327HTSA1
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RFQ
1,940
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.7A (Ta) 310 mOhm @ 1.7A, 5V 2V @ 1mA - 520pF @ 25V 5V ±14V
BSP372L6327HTSA1
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RFQ
1,063
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.7A (Ta) 310 mOhm @ 1.7A, 5V 2V @ 1mA - 520pF @ 25V 5V ±14V
BSP372L6327HTSA1
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RFQ
2,941
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.7A (Ta) 310 mOhm @ 1.7A, 5V 2V @ 1mA - 520pF @ 25V 5V ±14V
ZXMN10A11GTC
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RFQ
1,916
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Diodes Incorporated MOSFET N-CH 100V 1.7A SOT223 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta) N-Channel 100V 1.7A (Ta) 350 mOhm @ 2.6A, 10V 4V @ 250µA 5.4nC @ 10V 274pF @ 50V 6V, 10V ±20V