- Manufacture :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,930
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 100V 520MA SOT223 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 6.25W (Tc) | N-Channel | - | 100V | 520mA (Tc) | 10 Ohm @ 150mA, 5V | 2V @ 1mA | - | 40pF @ 10V | 5V | ±20V | |||
|
VIEW |
3,904
In-stock
|
NXP USA Inc. | MOSFET N-CH 100V 64A D2PAK | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 64A (Tc) | 19 mOhm @ 25A, 10V | 4V @ 1mA | 53nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
VIEW |
909
In-stock
|
NXP USA Inc. | MOSFET N-CH 100V 3.5A SC73 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 6.9W (Tc) | N-Channel | - | 100V | 3.5A (Tc) | 250 mOhm @ 1.75A, 5V | 2V @ 1mA | 12.2nC @ 5V | 374pF @ 25V | 5V | ±16V |