Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHU11NQ10T,127
RFQ
VIEW
RFQ
2,291
In-stock
NXP USA Inc. MOSFET N-CH 100V 10.9A SOT533 TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 57.7W (Tc) N-Channel 100V 10.9A (Tc) 180 mOhm @ 9A, 10V 4V @ 1mA 14.7nC @ 10V 360pF @ 25V 10V ±20V
IRFI520G
RFQ
VIEW
RFQ
3,417
In-stock
Vishay Siliconix MOSFET N-CH 100V 7.2A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 37W (Tc) N-Channel 100V 7.2A (Tc) 270 mOhm @ 4.3A, 10V 4V @ 250µA 16nC @ 10V 360pF @ 25V 10V ±20V
IRF520
RFQ
VIEW
RFQ
881
In-stock
Vishay Siliconix MOSFET N-CH 100V 9.2A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 60W (Tc) N-Channel 100V 9.2A (Tc) 270 mOhm @ 5.5A, 10V 4V @ 250µA 16nC @ 10V 360pF @ 25V 10V ±20V
IRFD120
RFQ
VIEW
RFQ
2,286
In-stock
Vishay Siliconix MOSFET N-CH 100V 1.3A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 100V 1.3A (Ta) 270 mOhm @ 780mA, 10V 4V @ 250µA 16nC @ 10V 360pF @ 25V 10V ±20V
IRFU120
RFQ
VIEW
RFQ
2,387
In-stock
Vishay Siliconix MOSFET N-CH 100V 7.7A I-PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 2.5W (Ta), 42W (Tc) N-Channel 100V 7.7A (Tc) 270 mOhm @ 4.6A, 10V 4V @ 250µA 16nC @ 10V 360pF @ 25V 10V ±20V