- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
928
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 1A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | 4-DIP (0.300", 7.62mm) | 4-HVMDIP | - | P-Channel | 100V | 1A (Ta) | 600 mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | - | - | |||
|
VIEW |
910
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 5.2A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 37W (Tc) | P-Channel | 100V | 5.2A (Tc) | 600 mOhm @ 3.1A, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,337
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 6.8A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 60W (Tc) | P-Channel | 100V | 6.8A (Tc) | 600 mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
|
VIEW |
708
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 1A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 100V | 1A (Ta) | 600 mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,511
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 1A HEXDIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | 4-DIP (0.300", 7.62mm) | 4-HVMDIP | - | P-Channel | 100V | 1A (Ta) | 600 mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | - | - | |||
|
VIEW |
2,024
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 5.6A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | P-Channel | 100V | 5.6A (Tc) | 600 mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
