Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFD9110
RFQ
VIEW
RFQ
1,588
In-stock
Vishay Siliconix MOSFET P-CH 100V 0.7A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) P-Channel 100V 700mA (Ta) 1.2 Ohm @ 420mA, 10V 4V @ 250µA 8.7nC @ 10V 200pF @ 25V 10V ±20V
IRF9510
RFQ
VIEW
RFQ
838
In-stock
Vishay Siliconix MOSFET P-CH 100V 4A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 43W (Tc) P-Channel 100V 4A (Tc) 1.2 Ohm @ 2.4A, 10V 4V @ 250µA 8.7nC @ 10V 200pF @ 25V 10V ±20V
RFP2N10L
RFQ
VIEW
RFQ
3,385
In-stock
ON Semiconductor MOSFET N-CH 100V 2A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 25W (Tc) N-Channel 100V 2A (Tc) 1.05 Ohm @ 2A, 5V 2V @ 250µA - 200pF @ 25V 5V ±10V
IRFU9110
RFQ
VIEW
RFQ
2,446
In-stock
Vishay Siliconix MOSFET P-CH 100V 3.1A I-PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 2.5W (Ta), 25W (Tc) P-Channel 100V 3.1A (Tc) 1.2 Ohm @ 1.9A, 10V 4V @ 250µA 8.7nC @ 10V 200pF @ 25V 10V ±20V