Packaging :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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ON Semiconductor MOSFET P-CH 100V 18A TO-220ML - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220ML 2W (Ta), 30W (Tc) P-Channel - 100V 18A (Ta) 75.5 mOhm @ 9A, 10V - 74nC @ 10V 4200pF @ 20V 4V, 10V ±20V
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ON Semiconductor MOSFET N-CH 100V 120A TO-220-3 PowerTrench® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 263W (Tc) N-Channel - 100V 120A (Tc) 4.5 mOhm @ 100A, 10V 4V @ 250µA 74nC @ 10V 5270pF @ 50V 10V ±20V
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ON Semiconductor MOSFET N-CH 100V 120A I2PAK-3 PowerTrench® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 263W (Tc) N-Channel - 100V 120A (Tc) 4.5 mOhm @ 100A, 10V 4V @ 250µA 74nC @ 10V 5270pF @ 50V 10V ±20V