- Manufacture :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,027
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 120A TO220AB | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 349W (Tc) | N-Channel | - | 100V | 120A (Tc) | 5.2 mOhm @ 25A, 10V | 4V @ 1mA | 180nC @ 10V | 11810pF @ 25V | 10V | ±20V | |||
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VIEW |
931
In-stock
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Infineon Technologies | MOSFET N-CH 100V 88A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 100V | 88A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | |||
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VIEW |
610
In-stock
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IXYS | MOSFET N-CH 100V 80A TO-247 | HiPerFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 300W (Tc) | N-Channel | - | 100V | 80A (Tc) | 12.5 mOhm @ 40A, 10V | 4V @ 4mA | 180nC @ 10V | 4800pF @ 25V | 10V | ±20V | |||
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VIEW |
682
In-stock
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IXYS | MOSFET N-CH 100V 80A ISOPLUS220 | HiPerFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | 230W (Tc) | N-Channel | - | 100V | 80A (Tc) | 12.5 mOhm @ 40A, 10V | 4V @ 4mA | 180nC @ 10V | 4800pF @ 25V | 10V | ±20V | |||
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VIEW |
3,711
In-stock
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Infineon Technologies | MOSFET N-CH 100V 96A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 250W (Tc) | N-Channel | - | 100V | 96A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | |||
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VIEW |
1,925
In-stock
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Infineon Technologies | MOSFET N-CH 100V 96A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 100V | 96A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | |||
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VIEW |
3,355
In-stock
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Infineon Technologies | MOSFET P-CH 100V 40A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | P-Channel | - | 100V | 40A (Tc) | 60 mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | 2700pF @ 25V | 10V | ±20V |