- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
3,706
In-stock
|
NXP USA Inc. | MOSFET N-CH 100V 49A TO-220F | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220F | 55W (Tc) | N-Channel | 100V | 49A (Tj) | 8.5 mOhm @ 10A, 10V | 4V @ 1mA | 100nC @ 10V | 5512pF @ 50V | 10V | ±20V | |||
|
VIEW |
3,549
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 95A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 167W (Tc) | N-Channel | 100V | 95A (Tc) | 8.5 mOhm @ 95A, 10V | 4V @ 130µA | 100nC @ 10V | 6660pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,229
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 95A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 167W (Tc) | N-Channel | 100V | 95A (Tc) | 8.5 mOhm @ 95A, 10V | 4V @ 130µA | 100nC @ 10V | 6660pF @ 50V | 10V | ±20V | |||
|
VIEW |
2,754
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 42A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 140W (Tc) | N-Channel | 100V | 42A (Tc) | 18 mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | 2930pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,142
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 42A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 140W (Tc) | N-Channel | 100V | 42A (Tc) | 18 mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | 2930pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,351
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 42A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 140W (Tc) | N-Channel | 100V | 42A (Tc) | 18 mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | 2930pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,378
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 8A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 2.1W (Ta), 500W (Tc) | N-Channel | 100V | 8A (Ta), 130A (Tc) | 12 mOhm @ 20A, 10V | 3.8V @ 250µA | 100nC @ 10V | 4833pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,864
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 72A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 217W (Tc) | N-Channel | 100V | 77A (Tc) | 14 mOhm @ 72A, 10V | 4V @ 250µA | 100nC @ 10V | 3700pF @ 25V | 10V | ±20V |