Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,383
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Renesas Electronics America MOSFET N-CH 100V MP-45F/TO-220 - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Isolated Tab TO-220 Isolated Tab 2W (Ta), 20W (Tc) N-Channel 100V 12A (Tc) 125 mOhm @ 6A, 10V - 21nC @ 10V 900pF @ 10V 4.5V, 10V ±20V
MTP12P10G
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2,231
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ON Semiconductor MOSFET P-CH 100V 12A TO220AB - Obsolete Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 75W (Tc) P-Channel 100V 12A (Tc) 300 mOhm @ 6A, 10V 4.5V @ 1mA 50nC @ 10V 920pF @ 25V 10V ±20V
IRLI530N
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2,374
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Infineon Technologies MOSFET N-CH 100V 12A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 41W (Tc) N-Channel 100V 12A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V
IRFI530N
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3,052
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Infineon Technologies MOSFET N-CH 100V 12A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 41W (Tc) N-Channel 100V 12A (Tc) 110 mOhm @ 6.6A, 10V 4V @ 250µA 44nC @ 10V 640pF @ 25V 10V ±20V
IRF9530
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2,542
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Vishay Siliconix MOSFET P-CH 100V 12A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 88W (Tc) P-Channel 100V 12A (Tc) 300 mOhm @ 7.2A, 10V 4V @ 250µA 38nC @ 10V 860pF @ 25V 10V ±20V