Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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745
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IXYS MOSFET N-CH 100V 72A ISOPLUS220 MegaMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ 230W (Tc) N-Channel - 100V 72A (Tc) 20 mOhm @ 37.5A, 10V 4V @ 250µA 260nC @ 10V 4500pF @ 25V 10V ±20V
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682
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IXYS MOSFET N-CH 100V 80A ISOPLUS220 HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ 230W (Tc) N-Channel - 100V 80A (Tc) 12.5 mOhm @ 40A, 10V 4V @ 4mA 180nC @ 10V 4800pF @ 25V 10V ±20V
IXTC200N10T
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1,558
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IXYS MOSFET N-CH 100V 101A ISOPLUS220 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS220™ 160W (Tc) N-Channel - 100V 101A (Tc) 6.3 mOhm @ 50A, 10V 4.5V @ 250µA 152nC @ 10V 9400pF @ 25V 10V ±30V
IXTC180N10T
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1,421
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IXYS MOSFET N-CH 100V 90A ISOPLUS220 - Obsolete Tube MOSFET (Metal Oxide) - Through Hole ISOPLUS220™ 150W (Tc) N-Channel - 100V 90A (Tc) - - - - - -
IXTC160N10T
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1,565
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IXYS MOSFET N-CH 100V 83A ISOPLUS220 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS220™ 140W (Tc) N-Channel - 100V 83A (Tc) 7.5 mOhm @ 25A, 10V 4.5V @ 250µA 132nC @ 10V 6600pF @ 25V 10V ±20V
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691
In-stock
IXYS MOSFET N-CH 100V 60A ISOPLUS220 HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS220™ 120W (Tc) N-Channel - 100V 60A (Tc) 17 mOhm @ 55A, 10V 5V @ 4mA 110nC @ 10V 3550pF @ 25V 10V ±20V