- Manufacture :
- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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_SOT226%20Pkg.jpg)
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VIEW |
1,781
In-stock
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NXP USA Inc. | MOSFET N-CH 100V 120A I2PAK | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 349W (Tc) | N-Channel | - | 100V | 120A (Tc) | 5.9 mOhm @ 25A, 10V | 2.1V @ 1mA | 133nC @ 5V | 17460pF @ 25V | 5V, 10V | ±10V | |||
|
VIEW |
1,848
In-stock
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STMicroelectronics | MOSFET N-CH 100V 80A I2PAK | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 300W (Tc) | N-Channel | - | 100V | 80A (Tc) | 23 mOhm @ 40A, 10V | 4V @ 250µA | 104nC @ 10V | 4270pF @ 25V | 10V | ±20V | |||
