Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFI9520N
RFQ
VIEW
RFQ
3,052
In-stock
Vishay Siliconix MOSFET P-CH 100V 5.5A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) P-Channel 100V 5.5A (Tc) 480 mOhm @ 4A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V
IRFR9120NTRLPBF
RFQ
VIEW
RFQ
1,863
In-stock
Infineon Technologies MOSFET P-CH 100V 6.6A DPAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 40W (Tc) P-Channel 100V 6.6A (Tc) 480 mOhm @ 3.9A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V
IRF9520NPBF
RFQ
VIEW
RFQ
3,751
In-stock
Infineon Technologies MOSFET P-CH 100V 6.8A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) - Through Hole TO-220-3 TO-220AB - P-Channel 100V 6.8A (Tc) 480 mOhm @ 4A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V - -
ZVN4310GTA
RFQ
VIEW
RFQ
1,362
In-stock
Diodes Incorporated MOSFET N-CH 100V 1.67A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 3W (Ta) N-Channel 100V 1.67A (Ta) 540 mOhm @ 3.3A, 10V 3V @ 1mA - 350pF @ 25V 5V, 10V ±20V
ZVN4310GTA
RFQ
VIEW
RFQ
2,717
In-stock
Diodes Incorporated MOSFET N-CH 100V 1.67A SOT223 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 3W (Ta) N-Channel 100V 1.67A (Ta) 540 mOhm @ 3.3A, 10V 3V @ 1mA - 350pF @ 25V 5V, 10V ±20V
IRFR9120NTRPBF
RFQ
VIEW
RFQ
1,597
In-stock
Infineon Technologies MOSFET P-CH 100V 6.6A DPAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 40W (Tc) P-Channel 100V 6.6A (Tc) 480 mOhm @ 3.9A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V
IRFR9120NTRPBF
RFQ
VIEW
RFQ
3,240
In-stock
Infineon Technologies MOSFET P-CH 100V 6.6A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 40W (Tc) P-Channel 100V 6.6A (Tc) 480 mOhm @ 3.9A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V
IRFR9120NTRPBF
RFQ
VIEW
RFQ
1,152
In-stock
Infineon Technologies MOSFET P-CH 100V 6.6A DPAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 40W (Tc) P-Channel 100V 6.6A (Tc) 480 mOhm @ 3.9A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V
ZVN4310A
RFQ
VIEW
RFQ
997
In-stock
Diodes Incorporated MOSFET N-CH 100V 0.9A TO92-3 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92-3 850mW (Ta) N-Channel 100V 900mA (Ta) 500 mOhm @ 3A, 10V 3V @ 1mA - 350pF @ 25V 5V, 10V ±20V