Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH110N10P
RFQ
VIEW
RFQ
1,184
In-stock
IXYS MOSFET N-CH 100V 110A TO-247 PolarHT™ HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 480W (Tc) N-Channel - 100V 110A (Tc) 15 mOhm @ 500mA, 10V 5V @ 4mA 110nC @ 10V 3550pF @ 25V 10V ±20V
IXTH60N10
RFQ
VIEW
RFQ
3,043
In-stock
IXYS MOSFET N-CH 100V 60A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) N-Channel - 100V 60A (Tc) 20 mOhm @ 30A, 10V 4V @ 250µA 110nC @ 10V 3200pF @ 25V 10V ±20V
IRFP150NPBF
RFQ
VIEW
RFQ
2,839
In-stock
Infineon Technologies MOSFET N-CH 100V 42A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 160W (Tc) N-Channel - 100V 42A (Tc) 36 mOhm @ 23A, 10V 4V @ 250µA 110nC @ 10V 1900pF @ 25V 10V ±20V
IRFP150MPBF
RFQ
VIEW
RFQ
2,126
In-stock
Infineon Technologies MOSFET N-CH 100V 42A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 160W (Tc) N-Channel - 100V 42A (Tc) 36 mOhm @ 23A, 10V 4V @ 250µA 110nC @ 10V 1900pF @ 25V 10V ±20V
FDH3632
RFQ
VIEW
RFQ
1,227
In-stock
ON Semiconductor MOSFET N-CH 100V 80A TO-247 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 310W (Tc) N-Channel - 100V 12A (Ta), 80A (Tc) 9 mOhm @ 80A, 10V 4V @ 250µA 110nC @ 10V 6000pF @ 25V 6V, 10V ±20V