Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Vishay Siliconix MOSFET N-CHAN 100V POWERPAK SC-7 TrenchFET® Gen IV Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SC-70-6 PowerPAK® SC-70-6 Single 3.5W (Ta), 19W (Tc) N-Channel - 100V 5.4A (Ta), 12A (Tc) 55 mOhm @ 4A, 10V 4V @ 250µA 13nC @ 10V 550pF @ 50V 7.5V, 10V ±20V
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Vishay Siliconix MOSFET N-CHAN 100V POWERPAK 1212 TrenchFET® Gen IV Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 3.2W (Ta), 24W (Tc) N-Channel - 100V 5.2A (Ta), 14.2A (Tc) 54 mOhm @ 4A, 10V 4V @ 250µA 13nC @ 10V 550pF @ 50V 7.5V, 10V ±20V
SI7454DDP-T1-GE3
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Vishay Siliconix MOSFET N-CH 100V 21A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 4.1W (Ta), 29.7W (Tc) N-Channel - 100V 21A (Tc) 33 mOhm @ 10A, 10V 3V @ 250µA 19.5nC @ 10V 550pF @ 50V 4.5V, 10V ±20V
SIS892ADN-T1-GE3
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Vishay Siliconix MOSFET N-CH 100V 28A PPAK 1212 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 3.7W (Ta), 52W (Tc) N-Channel - 100V 28A (Tc) 33 mOhm @ 10A, 10V 3V @ 250µA 19.5nC @ 10V 550pF @ 50V 4.5V, 10V ±20V