Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPN1600ANH,L1Q
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2,875
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Toshiba Semiconductor and Storage MOSFET N CH 100V 17A 8TSON-ADV U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 100V 17A (Tc) 16 mOhm @ 8.5A, 10V 4V @ 200µA 19nC @ 10V 1600pF @ 50V 10V ±20V
BSC265N10LSFGATMA1
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1,538
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Infineon Technologies MOSFET N-CH 100V 40A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 78W (Tc) N-Channel - 100V 6.5A (Ta), 40A (Tc) 26.5 mOhm @ 20A, 10V 2.4V @ 43µA 21nC @ 10V 1600pF @ 50V 4.5V, 10V ±20V