Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC159N10LSFGATMA1
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3,383
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Infineon Technologies MOSFET N-CH 100V 63A TDSON-8 OptiMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 114W (Tc) N-Channel - 100V 9.4A (Ta), 63A (Tc) 15.9 mOhm @ 50A, 10V 2.4V @ 72µA 35nC @ 10V 2500pF @ 50V 4.5V, 10V ±20V
IPD122N10N3GATMA1
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RFQ
2,414
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Infineon Technologies MOSFET N-CH 100V 59A OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 94W (Tc) N-Channel - 100V 59A (Tc) 12.2 mOhm @ 46A, 10V 3.5V @ 46µA 35nC @ 10V 2500pF @ 50V 6V, 10V ±20V
BSZ150N10LS3GATMA1
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RFQ
2,617
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Infineon Technologies MOSFET N-CH 100V 40A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 63W (Tc) N-Channel - 100V 40A (Tc) 15 mOhm @ 20A, 10V 2.1V @ 33µA 35nC @ 10V 2500pF @ 50V 4.5V, 10V ±20V
IPB123N10N3GATMA1
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RFQ
2,519
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Infineon Technologies MOSFET N-CH 100V 58A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 94W (Tc) N-Channel - 100V 58A (Tc) 12.3 mOhm @ 46A, 10V 3.5V @ 46µA 35nC @ 10V 2500pF @ 50V 6V, 10V ±20V
BSC109N10NS3GATMA1
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RFQ
1,924
In-stock
Infineon Technologies MOSFET N-CH 100V 63A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 78W (Tc) N-Channel - 100V 63A (Tc) 10.9 mOhm @ 46A, 10V 3.5V @ 45µA 35nC @ 10V 2500pF @ 50V 6V, 10V ±20V
IPD122N10N3GBTMA1
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RFQ
790
In-stock
Infineon Technologies MOSFET N-CH 100V 59A TO252-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 94W (Tc) N-Channel - 100V 59A (Tc) 12.2 mOhm @ 46A, 10V 3.5V @ 46µA 35nC @ 10V 2500pF @ 50V 6V, 10V ±20V