Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BTS121AE3045ANTMA1
RFQ
VIEW
RFQ
3,908
In-stock
Infineon Technologies MOSFET N CH 100V 22A TO-220AB TEMPFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220AB 95W (Tc) N-Channel - 100V 22A (Tc) 100 mOhm @ 9.5A, 4.5V 2.5V @ 1mA - 1500pF @ 25V 4.5V ±10V
FQB22P10TM-F085
RFQ
VIEW
RFQ
3,972
In-stock
ON Semiconductor MOSFET P-CH 100V 22A D2PAK Automotive, AEC-Q101, QFET® Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.75W (Ta), 125W (Tc) P-Channel - 100V 22A (Tc) 125 mOhm @ 11A, 10V 4V @ 250µA 50nC @ 10V 1500pF @ 25V 10V ±30V
FQB22P10TM
RFQ
VIEW
RFQ
3,031
In-stock
ON Semiconductor MOSFET P-CH 100V 22A D2PAK QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.75W (Ta), 125W (Tc) P-Channel - 100V 22A (Tc) 125 mOhm @ 11A, 10V 4V @ 250µA 50nC @ 10V 1500pF @ 25V 10V ±30V
FQB33N10TM
RFQ
VIEW
RFQ
2,391
In-stock
ON Semiconductor MOSFET N-CH 100V 33A D2PAK QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.75W (Ta), 127W (Tc) N-Channel - 100V 33A (Tc) 52 mOhm @ 16.5A, 10V 4V @ 250µA 51nC @ 10V 1500pF @ 25V 10V ±25V