Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI7454CDP-T1-GE3
RFQ
VIEW
RFQ
1,226
In-stock
Vishay Siliconix MOSFET N-CH 100V 22A PPAK SO-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 4.1W (Ta), 29.7W (Tc) N-Channel - 100V 22A (Tc) 30.5 mOhm @ 10A, 10V 2.8V @ 250µA 19.5nC @ 10V 580pF @ 50V 4.5V, 10V ±20V
SI7454DDP-T1-GE3
RFQ
VIEW
RFQ
744
In-stock
Vishay Siliconix MOSFET N-CH 100V 21A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 4.1W (Ta), 29.7W (Tc) N-Channel - 100V 21A (Tc) 33 mOhm @ 10A, 10V 3V @ 250µA 19.5nC @ 10V 550pF @ 50V 4.5V, 10V ±20V
SIS892ADN-T1-GE3
RFQ
VIEW
RFQ
2,924
In-stock
Vishay Siliconix MOSFET N-CH 100V 28A PPAK 1212 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.7W (Ta), 52W (Tc) N-Channel - 100V 28A (Tc) 33 mOhm @ 10A, 10V 3V @ 250µA 19.5nC @ 10V 550pF @ 50V 4.5V, 10V ±20V