Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDS86141
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2,270
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ON Semiconductor MOSFET N-CH 100V 7A 8-SOIC PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel 100V 7A (Ta) 23 mOhm @ 7A, 10V 4V @ 250µA 16.5nC @ 10V 934pF @ 50V 6V, 10V ±20V
STD10P10F6
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2,164
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STMicroelectronics MOSFET P-CH 100V 10A STripFET™ F6 Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 40W (Tc) P-Channel 100V 10A (Tc) 180 mOhm @ 5A, 10V 4V @ 250µA 16.5nC @ 10V 864pF @ 80V 10V ±20V
SI7113ADN-T1-GE3
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RFQ
1,859
In-stock
Vishay Siliconix MOSFET P-CH 100V 10.8A 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 27.8W (Tc) P-Channel 100V 10.8A (Tc) 132 mOhm @ 3.8A, 10V 2.6V @ 250µA 16.5nC @ 10V 515pF @ 50V 4.5V, 10V ±20V
BSP322PH6327XTSA1
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RFQ
2,738
In-stock
Infineon Technologies MOSFET P-CH 100V 1A SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel 100V 1A (Tc) 800 mOhm @ 1A, 10V 1V @ 380µA 16.5nC @ 10V 372pF @ 25V 4.5V, 10V ±20V
ZXMP10A16KTC
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RFQ
3,830
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Diodes Incorporated MOSFET P-CH 100V 3A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3 2.15W (Ta) P-Channel 100V 3A (Ta) 235 mOhm @ 2.1A, 10V 4V @ 250µA 16.5nC @ 10V 717pF @ 50V 6V, 10V ±20V