Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 100V 4.5A 8-SOIC HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 4.5A (Ta) 60 mOhm @ 2.7A, 10V 5.5V @ 250µA 50nC @ 10V 930pF @ 25V 10V ±30V
IRFH7188TRPBF
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Infineon Technologies MOSFET N-CH 100V 18A FASTIRFET™, HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 3.8W (Ta), 132W (Tc) N-Channel - 100V 18A (Ta), 105A (Tc) 6 mOhm @ 50A, 10V 3.9V @ 150µA 50nC @ 10V 2116pF @ 50V 10V ±20V
FQB22P10TM-F085
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ON Semiconductor MOSFET P-CH 100V 22A D2PAK Automotive, AEC-Q101, QFET® Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.75W (Ta), 125W (Tc) P-Channel - 100V 22A (Tc) 125 mOhm @ 11A, 10V 4V @ 250µA 50nC @ 10V 1500pF @ 25V 10V ±30V
SUM70090E-GE3
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2,435
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Vishay Siliconix MOSFET N-CH 100V 50A D2PK TO263 ThunderFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D2Pak) 125W (Tc) N-Channel - 100V 50A (Tc) 8.9 mOhm @ 20A, 10V 4V @ 250µA 50nC @ 10V 1950pF @ 50V 7.5V, 10V ±20V
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ON Semiconductor MOSFET P-CH 100V 22A D2PAK QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.75W (Ta), 125W (Tc) P-Channel - 100V 22A (Tc) 125 mOhm @ 11A, 10V 4V @ 250µA 50nC @ 10V 1500pF @ 25V 10V ±30V
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Infineon Technologies MOSFET N-CH 100V 4.5A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 100V 4.5A (Ta) 60 mOhm @ 2.7A, 10V 5.5V @ 250µA 50nC @ 10V 930pF @ 25V 10V ±30V
AO4294
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643
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 100V 11.5A 8SOIC - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3.1W (Ta) N-Channel - 100V 11.5A (Ta) 12 mOhm @ 11.5A, 10V 2.4V @ 250µA 50nC @ 10V 2420pF @ 50V 4.5V, 10V ±20V
FDMS86152
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2,365
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ON Semiconductor MOSFET N-CH 100V 14A POWER56 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN Power56 2.7W (Ta), 125W (Tc) N-Channel - 100V 14A (Ta), 45A (Tc) 6 mOhm @ 14A, 10V 4V @ 250µA 50nC @ 10V 3370pF @ 50V 6V, 10V ±20V