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- Operating Temperature :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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,%20SC-63.jpg)
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VIEW |
3,489
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 8.2A DPAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 3W (Ta), 136.4W (Tc) | N-Channel | - | 100V | 8.2A (Ta), 50A (Tc) | 18.5 mOhm @ 15A, 10V | 5V @ 250µA | 75nC @ 10V | 2600pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,543
In-stock
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Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,363
In-stock
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Infineon Technologies | MOSFET N-CH 100V 375A DIRECTFET | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric L8 | DIRECTFET L8 | 3.3W (Ta), 100W (Tc) | N-Channel | - | 100V | 19A (Ta), 114A (Tc) | 4.4 mOhm @ 68A, 10V | 5V @ 250µA | 120nC @ 10V | 5660pF @ 25V | 10V | ±20V | |||
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|
VIEW |
770
In-stock
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Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | 10V | ±20V | |||
