Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SISS71DN-T1-GE3
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RFQ
1,372
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Vishay Siliconix MOSFET P-CH 100V 23A 1212-8 ThunderFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerPAK® 1212-8S (3.3x3.3) 57W (Tc) P-Channel - 100V 23A (Tc) 59 mOhm @ 5A, 10V 2.5V @ 250µA 15nC @ 4.5V 1050pF @ 50V 4.5V, 10V ±20V
CSD19538Q3A
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RFQ
2,219
In-stock
Texas Instruments MOSFET N-CH 100V 15A VSONP NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-VSONP (3x3.15) 2.8W (Ta), 23W (Tc) N-Channel - 100V 15A (Ta) 59 mOhm @ 5A, 10V 3.8V @ 250µA 4.3nC @ 10V 454pF @ 50V 6V, 10V ±20V
CSD19538Q2
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RFQ
943
In-stock
Texas Instruments MOSFET NCH 100V 14.4A SON NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WSON (2x2) 2.5W (Ta), 20.2W (Tc) N-Channel - 100V 14.4A (Ta) 59 mOhm @ 5A, 10V 3.8V @ 250µA 5.6nC @ 10V 454pF @ 50V 6V, 10V ±20V
CSD19538Q2T
RFQ
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RFQ
1,827
In-stock
Texas Instruments MOSFET NCH 100V 13.1A 6WSON NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WSON (2x2) 2.5W (Ta), 20.2W (Tc) N-Channel - 100V 13.1A (Tc) 59 mOhm @ 5A, 10V 3.8V @ 250µA 5.6nC @ 10V 454pF @ 50V 6V, 10V ±20V
CSD19538Q3AT
RFQ
VIEW
RFQ
3,001
In-stock
Texas Instruments MOSFET N-CH 100V 15A VSONP NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-VSONP (3x3.15) 2.8W (Ta), 23W (Tc) N-Channel - 100V 15A (Ta) 59 mOhm @ 5A, 10V 3.8V @ 250µA 4.3nC @ 10V 454pF @ 50V 6V, 10V ±20V