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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,578
In-stock
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Rohm Semiconductor | MOSFET N-CH 100V 65A LPTS | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 100W (Tc) | N-Channel | - | 100V | 65A (Ta) | 9.1 mOhm @ 32.5A, 10V | 2.5V @ 1mA | 260nC @ 10V | 10780pF @ 25V | 4V, 10V | ±20V | ||||
VIEW |
2,518
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 65A D2PAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 156W (Tc) | N-Channel | - | 100V | 65A (Ta) | 4.5 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V |