Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF510STRRPBF
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Vishay Siliconix MOSFET N-CH 100V 5.6A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 3.7W (Ta), 43W (Tc) N-Channel 100V 5.6A (Tc) 540 mOhm @ 3.4A, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
IRF510STRLPBF
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3,588
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Vishay Siliconix MOSFET N-CH 100V 5.6A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - 43W (Tc) N-Channel 100V 5.6A (Tc) 540 mOhm @ 3.4A, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
FDT1600N10ALZ
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3,654
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ON Semiconductor MOSFET N-CH 100V SOT-223-4 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 10.42W (Tc) N-Channel 100V 5.6A (Tc) 160 mOhm @ 2.8A, 10V 2.8V @ 250µA 3.77nC @ 10V 225pF @ 50V 5V, 10V ±20V
IRFR9120TRLPBF
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RFQ
3,887
In-stock
Vishay Siliconix MOSFET P-CH 100V 5.6A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 42W (Tc) P-Channel 100V 5.6A (Tc) 600 mOhm @ 3.4A, 10V 4V @ 250µA 18nC @ 10V 390pF @ 25V 10V ±20V
IRFR9120TRPBF
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RFQ
1,619
In-stock
Vishay Siliconix MOSFET P-CH 100V 5.6A DPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 42W (Tc) P-Channel 100V 5.6A (Tc) 600 mOhm @ 3.4A, 10V 4V @ 250µA 18nC @ 10V 390pF @ 25V 10V ±20V