Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMN10H220LE-13
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Diodes Incorporated MOSFET N-CH 100V 2.3A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.8W (Ta) N-Channel 100V 2.3A (Ta) 220 mOhm @ 1.6A, 10V 2.5V @ 250µA 8.3nC @ 10V 401pF @ 25V 4.5V, 10V ±20V
IRFM120ATF
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3,478
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ON Semiconductor MOSFET N-CH 100V 2.3A SOT-223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2.4W (Ta) N-Channel 100V 2.3A (Ta) 200 mOhm @ 1.15A, 10V 4V @ 250µA 22nC @ 10V 480pF @ 25V 10V ±20V